Intel 18A is now ready
Intel 18A is now ready for customer projects with the tape outs beginning in the first half of 2025: contact us for more information.Intel 18A Differentiation
Up to 15% better performance per watt and 30% better chip density vs. the Intel 3 process node.
- The earliest available sub-2nm advanced node manufactured in North America, offering a resilient supply alternative for customers.
- Industry-first PowerVia backside-power delivery technology, improving density and cell utilization by 5 to 10 percent and reducing resistive power delivery droop, resulting in up to 4 percent ISO-power performance improvement and greatly reduced inherent resistance (IR) drop vs. front-side power designs.
- RibbonFET gate-all-around (GAA) transistor technology, enabling precise control of electrical current. RibbonFET allows further miniaturization of chip components while reducing power leakage, a critical concern for increasingly-dense chips.
- HD MIM capacitors, significantly reducing inductive power droop, enhancing stable chip operation. This capability is crucial for modern workloads like generative AI, which require sudden and intense computational power.
- Full support for industry-standard EDA tools and reference flows, enabling a smooth transition from other technology nodes. With EDA partners providing reference flows, our customers can start designing with PowerVia ahead of other backside power solutions.
- A robust assembly of more than 35 industry-leading ecosystem partners, ranging across EDA, IP, design services, cloud services, and aerospace and defense, helping ensure broad customer enablement to further ease adoption.
Intel 18A | See Our Biggest Process Innovation
See how the Intel 18A semiconductor manufacturing process is the foundation of the systems foundry for the AI era.
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