The High-NA EUV has a necessity of doubling exposures when the die height or an odd number of packed die heights exceeds the conventional 33 mm field height. This will entail stitching across the exposure field boundary, but may lead to feature distortion due to overlap from overlay. See: https://www.spiedigitallibrary.org/...formance-is-a-key/10.1117/12.3034393.full#_=_
Another exposure doubling may be recommended as split pupil exposures to improve the image since the depth of focus is limited easily and the images from opposite sides of the pupil are shifted relative to one another, leading to an extra source of blur. See: https://www.spiedigitallibrary.org/...17/1.JMM.24.1.011002.full?tab=ArticleLink#_=_
Of course, these exposure doublings will have obvious implications for throughput.
Another exposure doubling may be recommended as split pupil exposures to improve the image since the depth of focus is limited easily and the images from opposite sides of the pupil are shifted relative to one another, leading to an extra source of blur. See: https://www.spiedigitallibrary.org/...17/1.JMM.24.1.011002.full?tab=ArticleLink#_=_
Of course, these exposure doublings will have obvious implications for throughput.
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