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Researchers at Peking University (PKU) have developed a 2D transistor that is 40% faster and 10% more energy-efficient than the latest 3-nanometre silicon chips from Intel and TSMC. Led by Professor Peng Hailin, the team used bismuth-based materials (Bi2O2Se and Bi2SeO5) to create a Gate-All-Around Field-Effect Transistor (GAAFET), replacing the traditional FinFET design. This innovation improves electron flow and reduces energy loss, allowing transistors to run 1.4 times faster while consuming 90% of the energy compared to current chips. Amid US-led sanctions restricting access to advanced silicon chips, this breakthrough could help China bypass traditional chipmaking methods and gain an edge in next-gen semiconductor technology.
Researchers at Peking University (PKU) have developed a 2D transistor that is 40% faster and 10% more energy-efficient than the latest 3-nanometre silicon chips from Intel and TSMC. Led by Professor Peng Hailin, the team used bismuth-based materials (Bi2O2Se and Bi2SeO5) to create a Gate-All-Around Field-Effect Transistor (GAAFET), replacing the traditional FinFET design. This innovation improves electron flow and reduces energy loss, allowing transistors to run 1.4 times faster while consuming 90% of the energy compared to current chips. Amid US-led sanctions restricting access to advanced silicon chips, this breakthrough could help China bypass traditional chipmaking methods and gain an edge in next-gen semiconductor technology.
I'm not a senior member, I am the founder and Chief People Officer. Just because I posted it does not mean I believe it. I post in hopes of gathering more information on a topic from people that I know and trust.
I'm not a senior member, I am the founder and Chief People Officer. Just because I posted it does not mean I believe it. I post in hopes of gathering more information on a topic from people that I know and trust.
I'm not a senior member, I am the founder and Chief People Officer. Just because I posted it does not mean I believe it. I post in hopes of gathering more information on a topic from people that I know and trust.
It's a bit of a misnomer to call this "Silicon free" as they are just using hetero-epitaxy layers to make the transistors on a Silicon wafer. Any new transistor types will still be make on Silicon, using existing foundries that run Silicon wafers. https://www.nature.com/articles/s41563-025-02117-w?fromPaywallRec=true
Article
Published: 14 February 2025
Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration
