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China's New Silicon-Free Chip Beats Intel With 40% More Speed And 10% Less Energy

Daniel Nenni

Daniel Nenni

Admin
Staff member
Researchers at Peking University (PKU) have developed a 2D transistor that is 40% faster and 10% more energy-efficient than the latest 3-nanometre silicon chips from Intel and TSMC. Led by Professor Peng Hailin, the team used bismuth-based materials (Bi2O2Se and Bi2SeO5) to create a Gate-All-Around Field-Effect Transistor (GAAFET), replacing the traditional FinFET design. This innovation improves electron flow and reduces energy loss, allowing transistors to run 1.4 times faster while consuming 90% of the energy compared to current chips. Amid US-led sanctions restricting access to advanced silicon chips, this breakthrough could help China bypass traditional chipmaking methods and gain an edge in next-gen semiconductor technology.

 
Daniel Nenni said:
Researchers at Peking University (PKU) have developed a 2D transistor that is 40% faster and 10% more energy-efficient than the latest 3-nanometre silicon chips from Intel and TSMC. Led by Professor Peng Hailin, the team used bismuth-based materials (Bi2O2Se and Bi2SeO5) to create a Gate-All-Around Field-Effect Transistor (GAAFET), replacing the traditional FinFET design. This innovation improves electron flow and reduces energy loss, allowing transistors to run 1.4 times faster while consuming 90% of the energy compared to current chips. Amid US-led sanctions restricting access to advanced silicon chips, this breakthrough could help China bypass traditional chipmaking methods and gain an edge in next-gen semiconductor technology.

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As competitor, if it is so good, they will not tell you publicly.
 
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