UTBB FDSOI Devices Featuring 20nm Gate Length

UTBB FDSOI Devices Featuring 20nm Gate Length
by Eric Esteve on 01-09-2014 at 10:33 am

Did you go to IEDM 2013 in Washington DC ? You may have attended to the “Advanced CMOS Technology Platform” chaired by TSMC, and listen to the FD-SOI related presentation “High Performance UTBB FDSOI Devices Featuring 20nm Gate Length for 14nm Node and Beyond”. According with the abstract, this paper is the first time report of “high… Read More