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The relentless miniaturization of semiconductor devices has always relied on achieving ever-smaller features on silicon wafers. However, as the industry enters the realm of extreme ultraviolet (EUV) lithography, it faces a critical barrier: stochastics, or the inherent randomness in patterning at atomic scales. This phenomenon… Read More
The stochastic nature of imaging has received a great deal of attention in the area of EUV lithography. The density of EUV photons reaching the wafer is low enough [1] that the natural variation in the number of photons arriving at a given location can give rise to a relatively large standard deviation.
In recent studies [2,3], it … Read More
