A Forbidden Pitch Combination at Advanced Lithography Nodes

A Forbidden Pitch Combination at Advanced Lithography Nodes
by Fred Chen on 03-06-2020 at 10:00 am

A Forbidden Pitch Combination at Advanced Lithography Nodes

The current leading edge of advanced lithography nodes (e.g., “7nm” or “1Z nm”) features pitches (center-center distances between lines) in the range of 30-40 nm. Whether EUV (13.5 nm wavelength) or ArF (193 nm wavelength) lithography is used, one thing for certain is that the minimum imaged pitch … Read More