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Epitaxial stacks of silicon and silicon germanium are emerging as a key materials platform for three dimensional dynamic random access memory. Future DRAM will likely migrate from vertical channels to horizontally stacked channels that resemble the gate all around concept in logic. That shift demands a starter material made… Read More
The rationale behind the Tower Semi acquisition and things to watch out for at Intel’s investor day.
Intel bids for Tower Semi
First I have to quote myself because Tower was an error of omission. In November in a piece that was likely too long for its own good, I mentioned that trailing edge fabs are in a huge position of strength… Read More
