Self-Aligned Spacer Patterning for Minimum Pitch Metal in DRAM

Self-Aligned Spacer Patterning for Minimum Pitch Metal in DRAM
by Fred Chen on 11-23-2025 at 10:00 am

Spacer Patterning for Minimum Pitch Metal in DRAM 1

The patterning of features outside a DRAM cell array can be just as challenging as those within the array itself [1]. The array contains features which are densely packed, but regularly arranged. On the other hand, outside the array, the minimum pitch features, such as the lowest metal lines in the periphery for the sense amplifier… Read More