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Electron beam lithography is commercially used to directly write submicron patterns onto advanced node masks. With the advent of EUV masks and nanometer-scale NIL (nanoimprint lithography), multi-beam writers are now being used, compensating the ultralow throughput of a single high-resolution electron beam with the use… Read More
For advanced lithography used to shrink semiconductor device features according to Moore’s Law, resolution limits are an obvious consideration. It is often perceived that the resolution limit is simply derived from a well-defined equation, but nothing can be further from the truth.
Optical Lithography: the fine print
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