Electron beam lithography is commercially used to directly write submicron patterns onto advanced node masks. With the advent of EUV masks and nanometer-scale NIL (nanoimprint lithography), multi-beam writers are now being used, compensating the ultralow throughput of a single high-resolution electron beam with the use… Read More
Tag: NA EUV
Highlights of the “Intel Accelerated” Roadmap Presentation
Introduction
Intel recently provided a detailed silicon process and advanced packaging technology roadmap presentation, entitled “Intel Accelerated”. The roadmap timeline extended out to 2024, with discussions of Intel client, data center, and GPU product releases, and especially, the underlying technologies to be … Read More