As semiconductor manufacturing pushes toward advanced nodes with tighter feature sizes, the optical proximity correction (OPC) workflow is adopting curvilinear masks to achieve the larger process windows that traditional Manhattan geometries cannot deliver.
Traditional Manhattan masks constrain shapes to vertical … Read More
Masks have always been an essential part of the lithography process in the semiconductor industry. With the smallest printed features already being subwavelength for both DUV and EUV cases at the bleeding edge, mask patterns play a more crucial role than ever. Moreover, in the case of EUV lithography, throughput is a concern, … Read More
