Self-Aligned Via Process Development for Beyond the 3nm Node

Self-Aligned Via Process Development for Beyond the 3nm Node
by Tom Dillinger on 01-05-2022 at 6:00 am

TEM DoD

The further scaling of interconnect and via lithography for advanced nodes is challenged by the requirement to provide a process window that supports post-patterning critical dimension variations and mask overlay tolerances.  At the recent international Electron Devices Meeting (IEDM) in San Francisco, TSMC presented … Read More


GLOBALFOUNDRIES and Mentor Develop Methods to Identify Critical Features in IC Designs

GLOBALFOUNDRIES and Mentor Develop Methods to Identify Critical Features in IC Designs
by glforte on 11-28-2012 at 3:00 pm

Since the beginning of the semiconductor industry, improving the rate of yield learning has been a critical factor in the success silicon manufacturing. Each fab has dedicated yield teams that look at the yield of wafers manufactured the previous day and attempt to find the root cause of any unexpected “excursions.” In earlier… Read More