SPIE 2017 ASML and Cadence EUV impact on place and route

SPIE 2017 ASML and Cadence EUV impact on place and route
by Scotten Jones on 04-13-2017 at 7:00 am

As feature sizes have shrunk, the semiconductor industry has moved from simple, single-exposure lithography solutions to increasingly complex resolution-enhancement techniques and multi-patterning. Where the design on a mask once matched the image that would be produced on the wafer, today the mask and resulting image … Read More