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Previously, I had indicated how detrimental stochastic effects at pitches below 50 nm should lead to reconsidering the practical resolution limit for EUV lithography [1]. This is no exaggeration, as stochastic effects have been observed for 24 nm half-pitch several years ago [2,3]. This then leads to the question of whether … Read More
As any semiconductor process advances to the next generation or “node”, a sticky point is how to achieve the required higher resolution. As noted in another article [1], multipatterning (the required use of repeated patterning steps for a particular feature) has been practiced already for many years, and many have… Read More
