Self-heating and trapping enhancements in GaN HEMT models

Self-heating and trapping enhancements in GaN HEMT models
by Don Dingee on 05-02-2024 at 10:00 am

RTH0 extraction

High-fidelity models incorporating real-world, cross-domain effects are essential for accurate RF system simulation. The surging popularity of gallium nitride (GaN) technology in 5G base stations, satellite communication, defense systems, and other applications raises the bar for transistor modeling. Keysight dives… Read More


Extending Moore’s Law with 3D Heterogeneous Materials Integration

Extending Moore’s Law with 3D Heterogeneous Materials Integration
by Tom Dillinger on 05-18-2021 at 10:00 am

nFET Si pFET Ge

A great deal has been written of late about the demise of Moore’s Law.  The increase in field-effect transistor density with successive process nodes has slowed from the 2X every 2 1/2 years pace of earlier generations.  The economic nature of Moore’s comments 50 years ago has also been scrutinized – the reduction in cost per transistorRead More