A Realistic Electron Blur Function Shape for EUV Resist Modeling

A Realistic Electron Blur Function Shape for EUV Resist Modeling
by Fred Chen on 03-13-2025 at 10:00 am

EUV Image 4

Peak probability at zero distance actually makes no sense

In lithography, it is often stated that the best resolution that can be achieved depends on wavelength and numerical aperture (NA), but this actually only applies to the so-called “aerial” image. When the image is actually formed in the resist layer, it also depends on an… Read More