Electron Blur Impact in EUV Resist Films from Interface Reflection

Electron Blur Impact in EUV Resist Films from Interface Reflection
by Fred Chen on 11-08-2022 at 6:00 am

Electron Blur Impact in EUV Resist Films from Interface Reflection

The resolution of EUV lithography is commonly expected to benefit from the shorter wavelengths (13.2-13.8 nm) but in actuality the printing process needs to include Pde the consideration of the lower energy electrons released by the absorption of EUV photons. The EUV photon energy itself has a nominal energy range of 90-94 eV,… Read More