Double Diffraction in EUV Masks: Seeing Through The Illusion of Symmetry

Double Diffraction in EUV Masks: Seeing Through The Illusion of Symmetry
by Fred Chen on 05-22-2022 at 7:00 am

Double Diffraction in EUV Masks

At this year’s SPIE Advanced Lithography conference, changes to EUV masks were particularly highlighted, as a better understanding of their behavior is becoming clear. It’s now confirmed that a seemingly symmetric EUV mask absorber pattern does not produce a symmetric image at the wafer, as a conventional DUV … Read More


The Uncertain Phase Shifts of EUV Masks

The Uncertain Phase Shifts of EUV Masks
by Fred Chen on 05-13-2020 at 10:00 am

The Uncertain Phase Shifts of EUV Masks

EUV (Extreme UltraViolet) lithography has received attention within the semiconductor industry since its development inception in 1997 with the formation of the EUV LLC [1], and more recently, since the 7nm node began, with limited use by Samsung and TSMC being touted as key advantages [2, 3]. As with any key critical technology,

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Semicon: Multiple Patterning vs EUV, round #2

Semicon: Multiple Patterning vs EUV, round #2
by Paul McLellan on 07-24-2013 at 9:00 pm

Round #1 was here.

In the EUV corner were Stefan Wurm of Sematech (working on mask issues mostly) and Skip Miller of ASML who are the only company making EUV steppers (and light sources, they acquired Cymer).

You may know that the biggest issue in EUV is getting the source brightness to have high enough energy that an EUV stepper has … Read More