ANSYS Enters the League of 10nm Designs with TSMC

ANSYS Enters the League of 10nm Designs with TSMC
by Pawan Fangaria on 04-09-2015 at 7:00 pm

The way we are seeing technology progression these days is unprecedented. It’s just about six months ago, I had written about the intense collaboration between ANSYSand TSMCon the 16nm FinFET based design flow and TSMC certifying ANSYS tools for TSMC 16nm FF+ technology and also conferring ANSYS with “Partner of the Year” award.… Read More


FinFET & Multi-patterning Need Special P&R Handling

FinFET & Multi-patterning Need Special P&R Handling
by Pawan Fangaria on 04-28-2014 at 1:00 pm

I think by now a lot has been said about the necessity of multi-patterning at advanced technology nodes with extremely low feature size such as 20nm, because lithography using 193nm wavelength of light makes printing and manufacturing of semiconductor design very difficult. The multi-patterning is a novel semiconductor manufacturing… Read More


20nm IC production needs more than a ready Foundry

20nm IC production needs more than a ready Foundry
by Pawan Fangaria on 08-23-2013 at 11:00 am

I think by now all of us know, or have heard about 20nm process node, its PPA (Power, Performance, Area) advantages and challenges (complexity of high design size and density, heterogeneity, variability, stress, lithography complexities, LDEs and so on). I’m not going to get into the details of these challenges, but will ponder… Read More