There's also the issue with N2/N2+ that this transition is *not* like previous half-nodes (e.g. N7/N6, N5/N4, N3E/N3P) where all the IP is reusable -- the PPA attraction of N2+ is BPD, but this needs a complete relayout and recharacterisation of all IP, new libraries (standard cell/RAM) and custom IP such as SERDES, and rejigging the tools to separate out front-side and back-side interconnect. It's the biggest design/tool change for many years -- N2 is the last of the "frontside power" processes, N2+ is the first of the "backside-power" processes which is then likely to become the new standard. Compared to this, switching from planar to FinFET was simple...
I think anyone using N2 is unlikely to switch to N2+ due to the limited benefit, they're more likely to wait for N1.5 (or whatever the next process is called) to get a big step forward to justify the big redesign cost/effort. I agree that anyone on N3 is unlikely to switch to (dead-end) N2, if they're going to redesign they might as well go the whole hog and wait for N2+ which then gives them a clear path forwards as well as a further PPA improvement.
This is always the problem with a node where there's a step change in technology...