Wiki Tag: Samsung SF2
Samsung 2nm Process Technology Wiki
Node Name: Samsung 2nm
Internal Name: SF2 (Samsung Foundry 2nm)
Technology Type: Gate-All-Around (GAA) – MBCFET™
Developer: Samsung Electronics (Samsung Foundry Division)
Announced: May 2022
Targeted Risk Production: 2025
Targeted High Volume Manufacturing (HVM): 2026
Successor to: Samsung 3GAP (3nm Gate-All-Around… Read More
TSMC N2 vs Intel 18A vs Samsung SF2 Wiki
| Category | TSMC N2 | Intel 18A | Samsung 2nm (SF2) |
|---|---|---|---|
| Target Mass Production | 2H 2025 (risk production late 2024) | H2 2024 (internal); early 2025 for IFS customers | Late 2025 – risk production |
| Transistor Type | GAA nanosheet (TSMC’s implementation) | RibbonFET (Intel’s GAA design) | MBCFET™ (Multi-Bridge Channel FET) |
| Backside Power |
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