Wiki Tag: GAA
CFET (Complementary FET) Wiki
A Complementary FET (CFET) vertically stacks the n-FET and p-FET of a CMOS pair on top of each other (often as stacked nanosheets), collapsing the lateral n–p spacing in today’s standard cells. By “folding” CMOS into the vertical dimension, CFET targets major area and routing wins at future logic nodes while preserving strong … Read More
CMOS 2.0 Wiki
CMOS 2.0 refers to the next era of transistor and process technology innovation that succeeds traditional FinFET-based CMOS scaling. It encompasses a suite of architectural, materials, and integration innovations aimed at extending Moore’s Law into the angstrom era. CMOS 2.0 is characterized by Gate-All-Around (GAA) transistors… Read More
Samsung 2nm Process Technology Wiki
Node Name: Samsung 2nm
Internal Name: SF2 (Samsung Foundry 2nm)
Technology Type: Gate-All-Around (GAA) – MBCFET™
Developer: Samsung Electronics (Samsung Foundry Division)
Announced: May 2022
Targeted Risk Production: 2025
Targeted High Volume Manufacturing (HVM): 2026
Successor to: Samsung 3GAP (3nm Gate-All-Around… Read More
Samsung 3nm Process Technology Wiki
Official Names:
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Samsung 3GAE (3nm Gate-All-Around Early)
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Samsung 3GAP (3nm Gate-All-Around Plus)
Technology Type: Gate-All-Around (GAA) FET – MBCFET™
Developer: Samsung Electronics (Samsung Foundry)
Announced: 2021 (3GAE), 2022 (3GAP)
Mass Production Start: -
3GAE: June 2022
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3GAP: Expected 2024–2025
Predecessor: 4nm
Can RISC-V Help Recast the DPU Race?