It’s Better than SUPREM for 3D TCAD

It’s Better than SUPREM for 3D TCAD
by Daniel Payne on 12-06-2016 at 12:00 pm

Process and device engineers have a tough task to model and simulate an IC process prior to fabricating silicon, however this approach is much better than the alternative choice in the 1970’s of just running multiple lots of wafers and then making measurements to see if your node was meeting specifications. Out of Stanford… Read More