The device roadmap for the next few advanced process nodes seems relatively clear. The FinFET topology will subsequently be displaced by a “gate-all-around” device, typically using multiple stacked channels with a metal gate completely surrounding the “nanosheets”. Whereas the fin demonstrates improved gate-to-channel… Read More
Podcast EP240: Challenges and Strategies to Address New Embedded Memory Architectures with Mark Han
Dan is joined by Dr. Mark Han, Vice President of R&D Engineering for Circuit Simulation at Synopsys. Mark leads a team of over 300 engineers in developing cutting-edge advanced circuit simulation and transistor-level sign-off products, including characterization and static timing analysis. With 27 years of industry … Read More