A Practical Approach to Modeling ESD Protection Devices for Circuit Simulation

A Practical Approach to Modeling ESD Protection Devices for Circuit Simulation
by Tom Simon on 06-03-2019 at 8:00 am

Lurking inside of every Mosfet is a parasitic bipolar junction transistor (BJT). Of course, in normal circuit operation the BJT does not play a role in the device operation. Accordingly, SPICE models for Mosfets do not behave well when the BJT is triggered. However, these models work just fine for most purposes. The one important… Read More


Snapback behavior determines ESD protection effectiveness

Snapback behavior determines ESD protection effectiveness
by Tom Simon on 12-14-2017 at 12:00 pm

Terms like avalanche breakdown and impact ionization sound like they come from the world of science fiction. They do indeed come from a high stakes world, but one that plays out over and over again here and now, on a microscopic scale in semiconductor devices – namely as part of electrostatic discharge (ESD) protection. Semiconductor… Read More