The ferroelectric effect in materials has been exploited to fabricate (fab) reliable Ferroelectric Random Access Memories (FRAM) Non-Volatile Memory (NVM) ICs for over 20 years. Recent years have seen have seen a breakthrough in discovering ferroelectric properties in Hafnium Oxide (HfO2 or “hafnia”), a fab-friendly… Read More
Ferroelectric Hafnia-based Materials for Neuromorphic ICs
