In recent advanced nodes, via and cut patterning have constituted a larger and larger portion of the overall BEOL mask count. The advent of SALELE [1,2] caused mask count to increase for EUV as well, resulting in costs no longer being competitive with DUV down to 3nm [3]. Further development by TEL [4] has shown the possibility for… Read More
BEOL Mask Reduction Using Spacer-Defined Vias and Cuts
