Four Things a New Semiconductor Technology Must Have to be Disruptive

Four Things a New Semiconductor Technology Must Have to be Disruptive
by Alex Lidow on 08-21-2015 at 12:00 pm

This post discusses attributes of gallium nitride (#GaN) that make it a disruptive technology and identifies the four factors required for GaN technology to displace silicon as the technology of choice.

Displacing the Silicon with GaN

38 years ago, when I first entered the semiconductor business as a freshly minted Stanford
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GaN Technology for the Connected Car

GaN Technology for the Connected Car
by Alex Lidow on 08-16-2015 at 4:00 pm

GaN technology is disruptive, in the best sense of the word, making possible what was once thought to be impossible – eGaN® technology is 10 times faster, significantly smaller, and with higher performance at costs comparable to silicon-based MOSFETs. The inevitability of GaN displacing the aging power MOSFET is becoming clearerRead More


High-Voltage Power Design

High-Voltage Power Design
by admin on 05-20-2015 at 7:00 am

Most of what is talked about on SemiWiki is silicon design. After all for regular SoCs it is the only game in town. But for high voltage power applications (think automotive for one big market) there are other more esoteric technologies becoming more attractive.

Silicon has been the material of choice for high-voltage power applications… Read More