Displacing the Silicon Power MOSFET with eGaN® FETs
35 years ago the silicon power MOSFET was a disruptive technology that displaced the bipolar transistor – and a $12B market emerged. The dynamics of this transition taught us that there are four key factors controlling the adoption rate of a new power conversion technology:
In a previous post we discussed a few automotive applications that will be big markets for GaN technology. But this is just a small part of the GaN story!
GaN transistors such as eGaN FETs from EPC are today available with performance 10 times better than the best commercial silicon. What happens when several devices are integrated… Read More
