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TSMC N2 SRAM cell size hasn't scaled

Fred Chen

Moderator
1764904148013.png


TSMC introduced a 38.1Mb/mm2 SRAM in 2nm-CMOS-nanosheet technology for high-density and energy-efficient compute applications. The design uses a 0.021um2 high-density bitcell, and through DTCO improves the overall SRAM density by 1.1× compared to the previous technology node.


This cell size is the same as N5 and N3E, as well as Intel 18A.
 
View attachment 3939

TSMC introduced a 38.1Mb/mm2 SRAM in 2nm-CMOS-nanosheet technology for high-density and energy-efficient compute applications. The design uses a 0.021um2 high-density bitcell, and through DTCO improves the overall SRAM density by 1.1× compared to the previous technology node.


This cell size is the same as N5 and N3E, as well as Intel 18A.
While the bticell didn't scaled the macro size did scale quite a lot
1764912933284.jpeg

 
While the bticell didn't scaled the macro size did scale quite a lot
View attachment 3940
I have interacted with S.S. Lin and Y.C. Peng in the past
 
While the bticell didn't scaled the macro size did scale quite a lot
View attachment 3940
It looks like the array area efficiency went from 68% to 80%.
 
It looks like they improved N3 from 34 to 38 Mb/mm2, which is same as N2 currently. That's impressive using N3 design rules. Could the same be applied to N2, or is it already applied? 🤔
My gut (uneducated, not a SME) is they'll scale a little further later, on an improved N2 process. TSMC is very conservative in it's approaches for new nodes, and there were some discussions on this forum (from actual experts :) ), that GAAFET should allow some SRAM density improvements ovef FinFET.
 
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