Intel and SoftBank, through their subsidiary Saimemory, have been developing an alternative technology to the popular high-bandwidth memory (HBM) to provide more bandwidth and capacity for memory modules used with powerful AI accelerators. At VLSI 2026 in June, Saimemory is scheduled to present a paper on the newly developed HB3DM memory, which is based on Z-Angle Memory (ZAM) technology. This name refers to the vertical (Z-axis) stacking of dies, similar to traditional HBM. However, Intel aims to achieve impressive results using state-of-the-art manufacturing technology. The first generation of HB3DM will feature a total of nine layers, stacked using a hybrid bonding technique for 3D chip placement. At the base will be a logic layer that manages data movement within the chip, with eight DRAM layers on top for data storage. Each layer will include about 13,700 TSVs for hybrid bonding.
Intel Prepares HBM Killer: HB3DM Memory Stacks with Z-Angle Technology
Intel and SoftBank, through their subsidiary Saimemory, have been developing an alternative technology to the popular high-bandwidth memory (HBM) to provide more bandwidth and capacity for memory modules used with powerful AI accelerators. At VLSI 2026 in June, Saimemory is scheduled to present...
www.techpowerup.com
Intel Prepares HBM Killer: HB3DM Memory Stacks with Z-Angle Technology
Intel and SoftBank, through their subsidiary Saimemory, have been developing an alternative technology to the popular high-bandwidth memory (HBM) to provide more bandwidth and capacity for memory modules used with powerful AI accelerators. At VLSI 2026 in June, Saimemory is scheduled to present...
www.techpowerup.com
