SK Hynix adopts next-generation HNA-EUV ASML production equipment for DRAM

[Daniel Nenni]

SK hynix's headquarters in Icheon, Gyeonggi Province / Yonhap
By Yonhap

• Published Sep 3, 2025 11:07 am KST

Korea's No. 2 chipmaker SK hynix said Wednesday it has adopted advanced production equipment at a domestic memory production line to accelerate the development of next-generation chips.

The company said it has installed the industry's first High Numerical Aperture Extreme Ultraviolet (High NA EUV) lithography system at its M16 chip fabrication plant, located at its main production base in Icheon, south of Seoul.

High NA EUV refers to an advanced lithography system that delivers better resolution by applying a larger numerical aperture, which measures an optical system's ability to collect light.

The equipment, produced by the Netherlands-based ASML, offers a 40 percent improvement in numerical aperture, along with 1.7 times higher precision, according to the company.

SK hynix said the system is expected to accelerate the development of its next-generation memory products.
"We expect the addition of the critical infrastructure to bring our technological vision we have been pursuing into reality," said Cha Seon-yong, who heads the company's research and development.

"We aim to enhance our leadership in the artificial intelligence (AI) memory space with the cutting-edge technology required by the fast-growing AI and next-generation computing markets," Cha added.

Samsung Electronics, the larger Korean rival of SK hynix, also adopted the High NA EUV solution in March for its memory and foundry production.

SK hynix adopts next-generation ASML production equipment for DRAM - The Korea Times

Korea's No. 2 chipmaker SK hynix said Wednesday it has adopted advanced production equipment at a domestic memory production line to accelerate the...

www.koreatimes.co.kr

 

[MKWVentures]

Interesting. the article doesnt say DRAM. I am wondering if this is for 1d, 4f, or 3D DRAM? or general R&D

 

[Fred Chen]

SK Hynix should be worried about what's really limiting DRAM scaling.

As I've said here: https://semiwiki.com/forum/threads/...y-roadmap-at-ieee-vlsi-2025.23427/#post-90937
6F² scaling is now coming up against the issue of shrinking gap between bit line and storage node contact (already <7 nm). On the other hand, 4F² has the issue of word lines too close for cell sizes <0.0009 um². So 3D DRAM probably should be expedited.

 

[Daniel Nenni]

Interesting. the article doesnt say DRAM. I am wondering if this is for 1d, 4f, or 3D DRAM? or general R&D

I do not see how HNA EUV passes the ROI test on DRAM. This seems to be a "We are first" moment putting Samsung in its place, which is fine.

 

[MKWVentures]

SK Hynix should be worried about what's really limiting DRAM scaling.

As I've said here: https://semiwiki.com/forum/threads/...y-roadmap-at-ieee-vlsi-2025.23427/#post-90937
6F² scaling is now coming up against the issue of shrinking gap between bit line and storage node contact (already <7 nm). On the other hand, 4F² has the issue of word lines too close for cell sizes <0.0009 um². So 3D DRAM probably should be expedited.

4F is pretty doable and will be out in production in 2030 ish.... we will see on yields and fail modes over the next couple years.

They are just getting the cartoons done for 3D DRAM. and it doesnt reduce cost significantly even based on the cartoons (its not like 3D NAND). it is 2034 production best case....

Side comment: Nothing is replacing high density DRAM. Other technologies are less dense and more expensive.

 

[Fred Chen]

4F is pretty doable and will be out in production in 2030 ish.... we will see on yields and fail modes over the next couple years.

They are just getting the cartoons done for 3D DRAM. and it doesnt reduce cost significantly even based on the cartoons (its not like 3D NAND). it is 2034 production best case....

Side comment: Nothing is replacing high density DRAM. Other technologies are less dense and more expensive.

The thing about 4F2 is it has a short runway.

The channel material also seems not settled yet (also applies to 3D DRAM).