High-NA machines are no longer a part of Intel’s production plans for 18A. But the 18A setup line in Oregon can be used for evaluating the High-NA systems.
High-NA EUV systems have significant operation logistic differences from current 0.33 NA EUV systems, due to the different field size and the hole in the pupil mirror ("central obscuration"). The former can lead to requiring stitching of lines across field boundaries, while the latter leads to pitch incompatibilities (https://semiwiki.com/lithography/31...incompatibilities-in-high-na-euv-lithography/). In particular, 16 nm pitch and smaller will have the 1X/2X pitch incompatibility made worse by the central obscuration.
High-NA EUV systems also require much thinner resists, due to 64% less depth of focus, which aggravate the roughness and stochastic effects.
High-NA EUV systems have significant operation logistic differences from current 0.33 NA EUV systems, due to the different field size and the hole in the pupil mirror ("central obscuration"). The former can lead to requiring stitching of lines across field boundaries, while the latter leads to pitch incompatibilities (https://semiwiki.com/lithography/31...incompatibilities-in-high-na-euv-lithography/). In particular, 16 nm pitch and smaller will have the 1X/2X pitch incompatibility made worse by the central obscuration.
High-NA EUV systems also require much thinner resists, due to 64% less depth of focus, which aggravate the roughness and stochastic effects.
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