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Given the power consumption of PTL I say they made a good design choice. Doesn't that mean they have a chaper alternative for the same power/performance level?
If Backside or GAA/RibbonFET are new sources of yield loss, then relaxing to 36 nm pitch looks understandable. That said, high defect density at 36 nm pitch has been noted publicly before by imec, Samsung, and even (indirectly) TSMC.
If Backside or GAA/RibbonFET are new sources of yield loss, then relaxing to 36 nm pitch looks understandable. That said, high defect density at 36 nm pitch has been noted publicly before by imec, Samsung, and even (indirectly) TSMC.
We've heard that 18A yields were still on improvement path toward the end of 2025. Parametric yields could also result from stochastics as manifested in uniformity. But EUV yield is intrinsically erratic, since the D0 (from stochastics) can vary over an order of magnitude.
Looks like Jukan has access to a teardown, but doesn't provide the TEMs. Show us the TEMs Jukan. This is one of the first GAA products on the market, just showing it should be fascinating. Can we set aside politics long enough to take a breath and just enjoy the achievement of a GAAFET, a new milestone in semiconductors?
Looks like Jukan has access to a teardown, but doesn't provide the TEMs. Show us the TEMs Jukan. This is one of the first GAA products on the market, just showing it should be fascinating. Can we set aside politics long enough to take a breath and just enjoy the achievement of a GAAFET, a new milestone in semiconductors?
