Scott Jones is sticking with the Moore's Law 0.7X multiplier for each node, assuming that the foundries find a way to stay (roughly) on the transistor density curve. Here's a graph he recently published:
So, the next point on Scott's curve would be: 1.25 * 0.7 = 0.875... unfortunately the "0.875 node" doesn't really roll off the tongue.
Note that in Scott's curve, he has FinFETs transitioning to GAA nanosheets for a couple of process node generations, then transitioning to Complementary FETs (CFETs) in the 2028 timeframe (or thereabouts).
At a 10,000 foot level, CFETs are kind of similar to nanosheets, further extending the vertical stacking. So, if CFETs do indeed emerge as the next device type, perhaps the nomenclature should indicate how the vertical stack is constructed... perhaps something like: 1p2n (for one pMOS GAA nanosheet, with two nMOS nanosheets stacked on top). Append something indicating the first level metal pitch, and you've got a winner for a 19nm metal pitch: "1p2n19MP". Of course, the foundry marketing teams will never buy into describing that kind of detail.
Looking again at Scott's chart, perhaps a better descriptor is to go with the transistor density below the "1.25nm node"... say,
the "1B" node, for 1 billion transistors per mm**2. Now that's something marketing could latch onto... one billion transistors per sq. mm. has a nice ring to it. And, successive nodes could reflect that transistor density increase -- something like the "1.3B" node.
Then again, if CFETs are overtaken by a more esoteric technology, such as 2D MoS2 devices or 1D carbon nanosheets, then something different is perhaps appropriate... perhaps using the cellular "generation" nomenclature... e.g., "1G CNT", "2G CNT", etc.
Consider how obscure the cellular "5G" network performance is actually turning out to be, this may be a good way to hide the actual details of the underlying technology.
