Wiki Tag: Samsung 3nm

Samsung 3nm Process Technology Wiki

Samsung 3nm Process Technology Wiki
by Daniel Nenni on 07-13-2025 at 3:13 pm

Official Names:

  • Samsung 3GAE (3nm Gate-All-Around Early)

  • Samsung 3GAP (3nm Gate-All-Around Plus)
    Technology Type: Gate-All-Around (GAA) FET – MBCFET™
    Developer: Samsung Electronics (Samsung Foundry)
    Announced: 2021 (3GAE), 2022 (3GAP)
    Mass Production Start:

  • 3GAE: June 2022

  • 3GAP: Expected 2024–2025
    Predecessor: 4nm

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TSMC N3 Process Technology Wiki

TSMC N3 Process Technology Wiki
by Daniel Nenni on 07-13-2025 at 9:24 am
7 Comments

Overview

TSMC N3 is the 3-nanometer FinFET semiconductor manufacturing node developed by Taiwan Semiconductor Manufacturing Company (TSMC). It is a major milestone in TSMC’s process technology roadmap and represents the first step into the 3nm era, succeeding the N5 and N4 nodes.

Unlike Samsung, which introduced Gate-All-Around… Read More