32Mb Embedded STT-MRAM in ULL 22nm CMOS Achieves 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150C and High Immunity to Magnetic Field Interference presented at ISSCC2020
1. Motivation for STT-MRAM in Ultra-Low-Leakage 22nm Process
TSMC’s embedded Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)… Read More