Simulating Gate-All-Around (GAA) Devices at the Atomic Level

Simulating Gate-All-Around (GAA) Devices at the Atomic Level
by Daniel Payne on 09-17-2025 at 10:00 am

GAA FET min

Transistor fabrication has spanned the gamut from planar devices o FinFET to Gate-All-Around (GAA) as silicon dimensions have decreased in the quest for higher density, faster speeds and lower power. Process development engineers use powerful simulation tools to predict and even optimize transistor performance for GAA devices.… Read More