A Practical Approach to Modeling ESD Protection Devices for Circuit Simulation

A Practical Approach to Modeling ESD Protection Devices for Circuit Simulation
by Tom Simon on 06-03-2019 at 8:00 am

Lurking inside of every Mosfet is a parasitic bipolar junction transistor (BJT). Of course, in normal circuit operation the BJT does not play a role in the device operation. Accordingly, SPICE models for Mosfets do not behave well when the BJT is triggered. However, these models work just fine for most purposes. The one important… Read More