Intel and TSMC Take Different Paths to High-NA EUV

Intel and TSMC Take Different Paths to High-NA EUV
by Daniel Nenni on 08-07-2026 at 8:00 am

Intel TSMC HNA EUV 2026

Intel and TSMC are pursuing the same objective—manufacturing smaller, faster, and more energy-efficient semiconductors—but they have adopted different strategies for advanced lithography. Intel moved early to develop High-Numerical-Aperture Extreme Ultraviolet lithography, commonly called High-NA EUV, while TSMC… Read More


EUV Resist Degradation with Outgassing at Higher Doses

EUV Resist Degradation with Outgassing at Higher Doses
by Fred Chen on 09-03-2025 at 8:00 am

EUV Resist Degradation with Outgassing at Higher Doses

Dosing for EUV lithography walks a fine line between productivity and defectivity. Fabs can choose higher-dose exposures to suppress photon shot noise [1]. However, higher doses require EUV machines to scan the wafer at slower speeds, degrading throughput [2].

On the other hand, there is the threat of resist thickness loss that… Read More