From Two Dimensional Growth to Three Dimensional DRAM

From Two Dimensional Growth to Three Dimensional DRAM
by Admin on 08-06-2025 at 10:00 am

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Epitaxial stacks of silicon and silicon germanium are emerging as a key materials platform for three dimensional dynamic random access memory. Future DRAM will likely migrate from vertical channels to horizontally stacked channels that resemble the gate all around concept in logic. That shift demands a starter material made… Read More