Mask and Optical Models–Evolution of Lithography Process Models, Part IV

Mask and Optical Models–Evolution of Lithography Process Models, Part IV
by Beth Martin on 10-10-2011 at 4:50 pm

Will Rogers said that an economist’s guess is liable to be as good as anyone’s, but with advanced-node optical lithography, I might have to disagree. Unlike the fickle economy, the distorting effects of the mask and lithographic system are ruled by physics, and so can be modeled.

In this installment, I’ll talk about two critical… Read More


OPC Model Accuracy and Predictability – Evolution of Lithography Process Models, Part III

OPC Model Accuracy and Predictability – Evolution of Lithography Process Models, Part III
by Beth Martin on 08-15-2011 at 7:00 am

Wyatt Earp probably wasn’t thinking of OPC when he said, “Fast is fine, but accuracy is everything,” but I’ll adopt that motto for this discussion of full-chip OPC and post-OPC verification models.

Accuracy
is the difference between the calibrated model prediction and the calibration wafer result. Accuracy depends on several… Read More