Technological leadership has long been key to TSMC’s success and they are following up their leadership development of 5nm with the world’s smallest SRAM cell at 0.021um 2 with circuit design details of their write assist techniques necessary to achieve the full potential of this revolutionary technology. In addition to their… Read More
TSMC’s 5nm 0.021um2 SRAM Cell Using EUV and High Mobility Channel with Write Assist at ISSCC2020
