This is something I had just found yesterday. I also do not have that information. But it is intriguing that they address 12"wafers and 10nm resolution (better than the 2nm EUV systems' 13 nm resolution). But the overlay, uniformity and defectivity are all important for sure.I am not fully sure on what you are indicating in respect to nanoimprint lithography. In particular when the information provided in the link does not include key performance metrics such as throughput, defect rate, and template durability.
I am not sure if there have been takers for the FPA-1200NZ2C, although it is targeting 5nm and 2nm nodes: https://global.canon/en/product/indtech/semicon/fpa1200nz2c.html.It's clear that nanoimprint technology has significant potential in assisting with the manufacturing of photonic devices, microfluidics, and flexible electronics, and perhaps NAND, and even DRAM memory. There is however limited evidence that it is capable of meeting the demands for high density logic given its high level of defectivity, overlay, and template durability relative to Extreme ultraviolet lithography (EUV).
Even the most advance version of nanoimprint lithography made by the company of Canon (Molecular Imprints) represented by its machine FPA-1200NZ2C NIL system still does not come close to meeting the requirements for high density logic.
EUV has its defectivity issues as well, most notably the stochastic defects. While low photon density is a key contributor, it looks like it is not the only one. The EUV-induced plasma needs to be studied, particularly the impact from nanoparticles.
It's probably generally agreed that China would have the hardest time trying to replicate the most complicated technology. If they can work with simpler alternatives, surely they would opt for that. Nanoimprint is far from ready, but given its extreme (relative) simplicity, development cycles should be faster. Currently, SMIC uses DUV systems, probably mostly not the most advanced models. Multipatterning is necessary, but it would be expected even for 5nm and 3nm EUV.I however fully acknowledge that there could be other methods of alternatives to EUV, and I will applaud China authorities, and companies for investing and perusing new avenues. However, at this current stage, there is no evidence that there are any feasible pathways besides Extreme ultraviolet lithography (EUV) using laser-produced plasma (LPP).