Chinese scientists have developed a novel method for the mass production of high-quality "golden semiconductor" indium selenide, paving the way for manufacturing a new generation of chips that outperform current silicon-based technology.
The study, published online by Science on Friday, was conducted by researchers from Peking University and Renmin University of China.
Integrated circuits form the core of modern information technology. As silicon-based chip performance nears its physical limits, developing new high-performance, low-energy semiconductor materials has become a global research priority.
Indium selenide is known as a "golden semiconductor." However, its large-scale, high-quality production has long been elusive, hindering its widespread integration.
The core challenge lies in precisely maintaining the ideal 1:1 atomic ratio of indium and selenium during production, said Liu Kaihui, a professor at Peking University's School of Physics.
Using an innovative technique, the research team heated amorphous indium selenide film and solid indium under sealed conditions. Vaporized indium atoms formed an indium-rich liquid interface at the film's edge, gradually producing high-quality indium selenide crystals with a regular atomic arrangement.
Liu said this method ensures the correct atomic ratio and overcomes the critical bottleneck in transitioning indium selenide from laboratory research to engineering applications.
The team successfully produced 5-centimeter-diameter indium selenide wafers and constructed large-scale arrays of high-performance transistors, suitable for direct use in integrated chip devices, said Qiu Chengguang, a researcher at Peking University's School of Electronics.
Liu added that this breakthrough opens a new pathway for next-generation, high-performance, low-power chips expected to find broad applications in artificial intelligence, autonomous driving and smart terminals.
Reviewers of Science hailed this work as "an advancement in crystal growth."
China develops new method to mass-produce high-quality semiconductors - CGTN https://share.google/aYEQuVDGGR2vnvZwG
The study, published online by Science on Friday, was conducted by researchers from Peking University and Renmin University of China.
Integrated circuits form the core of modern information technology. As silicon-based chip performance nears its physical limits, developing new high-performance, low-energy semiconductor materials has become a global research priority.
Indium selenide is known as a "golden semiconductor." However, its large-scale, high-quality production has long been elusive, hindering its widespread integration.
The core challenge lies in precisely maintaining the ideal 1:1 atomic ratio of indium and selenium during production, said Liu Kaihui, a professor at Peking University's School of Physics.
Using an innovative technique, the research team heated amorphous indium selenide film and solid indium under sealed conditions. Vaporized indium atoms formed an indium-rich liquid interface at the film's edge, gradually producing high-quality indium selenide crystals with a regular atomic arrangement.
Liu said this method ensures the correct atomic ratio and overcomes the critical bottleneck in transitioning indium selenide from laboratory research to engineering applications.
The team successfully produced 5-centimeter-diameter indium selenide wafers and constructed large-scale arrays of high-performance transistors, suitable for direct use in integrated chip devices, said Qiu Chengguang, a researcher at Peking University's School of Electronics.
Liu added that this breakthrough opens a new pathway for next-generation, high-performance, low-power chips expected to find broad applications in artificial intelligence, autonomous driving and smart terminals.
Reviewers of Science hailed this work as "an advancement in crystal growth."
China develops new method to mass-produce high-quality semiconductors - CGTN https://share.google/aYEQuVDGGR2vnvZwG