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ASML’s High Numerical Aperture (High NA) Extreme Ultraviolet (EUV) lithography scanner sits in Intel Oregon’s D1X test manufacturing factory, where it is going through its final calibration. It is as big as a double-decker bus and weighs as much as a blue whale. It will shoot lasers at light speed and heat plasma to nearly 220,000 degrees Celsius, almost 40 times hotter than the surface temperature of the sun. The new TWINSCAN EXE: 5000 has the ability to dramatically improve resolution feature scaling for next-generation processors and will enable the continued pursuit of Moore’s Law.
The next video would be planned and show the first printed HNA EUV wafer with 10nm width/20nm pitch line/space patterns as ASML showed from imec lab recently. The key milestone to be checked will be: when HVM tool be ready? When intel will show HNA EUV wafer has better or comparable yield to 0.33NA multiple patterning wafer? When intel gets comparable or better D0 from 14A vs. 18A? Will it happen by 2026? Very challenging and Go for intel.
