Analysis of Qualcomm's Snapdragon 835 is complete at techinsights: Qualcomm Snapdragon 835 First to 10 nm
Intel's 14nm is 52nm x 70nm = 3640
-> 11% denser (please feel free to correct me if I made a mistake)
So, 48nm x 68nm = 3264We are able to confirm a 68 nm contacted gate pitch with dummy poly single diffusion break (SDB)
capability. The minimum BEOL pitch is difficult to determine with a cross section, but we expect to find
the publically published 48 nm pitch to be the minimum, once our functional block analysis looks into
the specific layout features. Overall, the process appears to be similar to Samsung’s 14LPE and 14LPP
processes, with a dual shallow trench isolation (STI) and extra processing necessary to enable a dummy
poly SDB. The contacts have been simplified to a single level to avoid a large increase in mask count.
While the gate has a dielectric cap and appears to be self-aligned contact capable, the initial cross
sections are not showing much, if any, usage of the gate cap.
Intel's 14nm is 52nm x 70nm = 3640
-> 11% denser (please feel free to correct me if I made a mistake)