Samsung recently announced plans to start using 3D DRAM in its upcoming memory products. This move will involve a technology called vertical channel transistors (VCT) and will begin with their cutting-edge, first-generation technology that's smaller than 10 nanometers. The announcement came during the Memcom conference and signifies a big step forward in DRAM technology, which has traditionally been based on 2D structures. Samsung expects to roll out this technology in the second half of the 2020s. Switching to 3D DRAM is a big deal because it could mean using either FinFET or gate-all-around (GAA) transistors.
These types of transistors could make memory cells much more efficient. One of the reasons is the use of a 4F² cell design. This design is great because it can lower the cost of making these products while still delivering high performance and packing more memory into the same amount of space. Tokyo Electron, a big name in the business of making semiconductor manufacturing equipment, believes that using VCTs and this efficient cell design in making DRAM will start happening between 2027 and 2028. Moving to this new kind of DRAM will probably also mean finding new materials to make capacitors and bitlines that work well with VCT-based DRAM.
The slide has been published by SemiEngineering and was republished by Fred Chen, a technology investigator. Looking even further ahead, Samsung has some really ambitious plans for DRAM. They're thinking about creating stacked DRAM technology in the early 2030s. This method would stack memory cells on top of each other, greatly increasing the amount of memory that can fit in the same space. This could pave the way for future DRAM technologies, like DDR6. By making these moves, Samsung is showing that it's really committed to pushing the boundaries of memory technology. This not only keeps them at the forefront of the industry but also helps ensure they stay competitive on the global stage.
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These types of transistors could make memory cells much more efficient. One of the reasons is the use of a 4F² cell design. This design is great because it can lower the cost of making these products while still delivering high performance and packing more memory into the same amount of space. Tokyo Electron, a big name in the business of making semiconductor manufacturing equipment, believes that using VCTs and this efficient cell design in making DRAM will start happening between 2027 and 2028. Moving to this new kind of DRAM will probably also mean finding new materials to make capacitors and bitlines that work well with VCT-based DRAM.
The slide has been published by SemiEngineering and was republished by Fred Chen, a technology investigator. Looking even further ahead, Samsung has some really ambitious plans for DRAM. They're thinking about creating stacked DRAM technology in the early 2030s. This method would stack memory cells on top of each other, greatly increasing the amount of memory that can fit in the same space. This could pave the way for future DRAM technologies, like DDR6. By making these moves, Samsung is showing that it's really committed to pushing the boundaries of memory technology. This not only keeps them at the forefront of the industry but also helps ensure they stay competitive on the global stage.
Samsung Announces Plans for 3D DRAM Development with Sub-10nm Technology
Samsung recently announced plans to start using 3D DRAM in its upcoming memory products. This move will involve a technology called vertical channel transistors (VCT) and will begin with their cutting-edge, first-generation technology that's smaller than 10 nanometers.
www.guru3d.com