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It is designed to be a low NA (0.2NA) system. Higher NA requires the mask to be curved instead of flat. There are forbidden pitches due to the central obscuration (just like ASML's High-NA).
Seems like a more simplified and cheap approach for reaching EUV with some clear limitations.
I guess a method like this would be an ideal way for nations such as China to quickly enter the lithography industry without the insane capital costs and time required to recreate a six mirror laser-produced plasma light source EUV system.
There are some noticeable drawbacks such as a limit of 0.2-0.3 NA thereby allowing a 16nm half-pitch. In addition to a smaller field size. This can be solved by multi-patterning, and the integration of chiplets.